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80 Growth Mechanism and Properties of MgxZn(1-x)O Nanocomposites by Atomic Layer Deposition

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Description: Growth Mechanism and Properties of MgxZn(1-x)O nanocomposites by Atomic Layer Deposition Qing Peng, Anil U. Mane, David J. Comstock, Seon-Woo Lee, Hau H. Wang, Joseph A. Libera and Jeffrey W. Elam* Energy Systems, Argonne National Laboratory, Argonne, USA * Magnesium-zinc oxide (MgxZn(1-x)O) ternary films are an interesting class of alloy materials in which the band gap can be tuned by adjusting the Mg doping concentration. Consequently, MgxZn(1-x)O has been widely studied for application in the fields of the electronics, optics, photoelectronics, solar cells etc. MgxZn(1-x)O thin films have been fabricated through a variety of methods including chemical vapor deposition, physical vapor deposition, molecular beam deposition, and ALD. Although there have recently been a few reports describing ALD MgxZn(1-x)O for application in photvoltaics, there has been no detailed study of the growth mechanism and properties of the ALD MgxZn(1-x)O thin films. In this work, the ALD MgxZn(1-x)O was systematically explored with different doping concentration of Mg by using diethyl zinc (DEZ), bis-cyclopentadienyl-magnesium (Cp2Mg) and H2O as the precursors. The growth mechanism was investigated using quartz crystal microbalance and quadrupole mass spectrometry measurements. The growth rate of the MgxZn(1-x)O alloy films was determined using spectroscopic ellipsometry. The crystal structures of the films before and after thermal treatment were analyzed using x-ray diffraction. In addition, the optical properties of the MgxZn(1-x)O with different Mg concentrations were analyzed using UV-vis absorption spectroscopy and the electrical properties were evaluated using mercury probe current-voltage measurements. The thermal stability of the conductivity and structure of the MgxZn(1-x)O film were studied as well.

Jeffrey W. Elam
Seon Woo Lee
Qing Peng
Hau Wang

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